5? features high current transfer ratio il211a?0% minimum il212a?0% minimum il213a?00% minimum isolation voltage, 2500 vac rms electrical speci?ations similar to standard 6 pin coupler industry standard soic-8 surface mountable package standard lead spacing, .05" available in tape and reel option (conforms to eia standard rs481a) compatible with dual wave, vapor phase and ir re?w soldering underwriters lab file #e52744 (code letter p) description the il211a/212a/213a are optically coupled pairs with a gallium arsenide infrared led and a silicon npn phototransistor. signal information, including a dc level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. the il211a//212a/213a comes in a standard soic-8 small outline package for surface mounting which makes it ideally suited for high density applications with limited space. in addition to eliminating through-holes requirements, this package conforms to standards for surface mounted devices. a choice of 20, 50, and 100% minimum ctr at i f =10 ma makes these optocouplers suitable for a variety of different applications. maximum ratings emitter peak reverse voltage .....................................6.0 v continuous forward current .........................60 ma power dissipation at 25 c............................90 mw derate linearly from 25 c......................1.2 mw/ c detector collector-emitter breakdown voltage...............30 v emitter-collector breakdown voltage.................7 v collector-base breakdown voltage..................70 v power dissipation ......................................150 mw derate linearly from 25 c2.0 mw/ c package total package dissipation at 25 c ambient (led + detector) ....................................280 mw derate linearly from 25 c......................3.3 mw/ c storage temperature ...................?5 c to +150 c operating temperature ...............?5 c to +100 c soldering time at 260 c ............................. 10 sec. new characteristics ( t a =25 c) symbol min. typ. max. unit condition emitter forward voltage v f 1.3 1.5 v i f =10 ma reverse current i r 0.1 100 m av r =6.0 v capacitance c o 25 pf v r =0 detector breakdown voltage b vceo b veco 30 7 v v i c =10 m a i e =10 m a dark current, collector-emitter i ceodark 550na v ce =10 v i f =0 capacitance, collector-emitter c ce 10 pf v ce =0 package dc current transfer ratio il211a il212a il213a ctr dc 20 50 100 50 80 130 %i f =10 ma, v ce =5 v saturation voltage, collector-emitter v cesat 0.4 i f =10 ma, i c =2.0 ma isolation test voltage v io 2500 vac rms capacitance, input tooutput c io 0.5 pf resistance, input to output r io 100 g w switching time t on ,t off 3.0 m si c =2 ma, r e =100 w , v ce =10 v dimensions in inches (mm) 40 .240 ( 6.10) .154 .005 (3.91 .13) .050 (1.27) typ. .016 (.41) .192 .005 (4.88 .13) .004 (.10) .008 (.20) lead coplanarity .0015 (.04) max. .015 .002 (.38 .05) .008 (.20) 7 .058 .005 (1.49 .13) .125 .005 (3.18 .13) pin one id .120 .005 (3.05 .13) c l .021 (.53) 5 max. r.010 (.25) max. .020 .004 (.15 .10) 2 plcs. 1 2 3 4 anode cathode nc nc 8 7 6 5 nc base collector emitter il211a/212a/213a phototransistor small outline surface mount optocoupler
5? il211a/212a/213a figure 1. forward voltage versus forward current figure 2. normalized non-saturated and saturated ctrce versus led current figure 3. collector-emitter current versus led current figure 4. normalized collector-base photocurrent versus led current .1 1 10 100 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 if- forward current - ma vf-forward voltage - v ta = -55 c ta = 25 c ta = 100 c .1 1 10 100 0.0 0.5 1.0 1.5 vce = 5 v vce = 0.4 v if - led current - ma nctrce - normalized ctrce normalized to: vce = 10 v if = 10 ma ta = 25 c .1 1 10 100 0 50 100 150 vce = 0.4 v vce = 10 v if - led current - ma ice - collector-emitter current - ma ta = 25 c .1 1 1 0 100 .1 1 10 100 if - led current - ma nicb - normalized icb normalized to : vcb = 9.3 v if = 1 ma ta = 25 c figure 5. normalized collector-base photocurrent versus led current figure 6. collector-base photocurrent versus led current figure 7. collector-emitter leakage current versus temperature figure 8. normalized saturated hfe versus base current and temperature .1 1 10 100 .01 .1 1 10 normalized to: vcb = 9.3 v if = 10 ma ta = 25 c if - led current - ma nicb - normalized icb .1110100 .1 1 10 10 0 10 00 i f - led current - ma icb - collector-base current - m a ta = 2 5 c vcb = 9 .3 v 100 80 60 40 20 0 -20 10 10 10 10 10 10 10 10 -2 -1 0 1 2 3 4 5 gp ta - ambient temperature - c iceo - collector-emitter - na typical vce = 10v 1 10 100 1000 0.0 0.5 1.0 1.5 2.0 25 c 50 c 70 c ib - base current - m a nhfe(sat) - normalized saturated hfe normalized to: ib = 20 m a vce = 10 v ta = 25 c vce = 0.4 v
5? il211a/212a/213a figure 10. typical switching times versus load resistance 1000 500 100 50 10 5 1 0.1 0.5 1 5 10 50 100 input: i f =10 ma pulse width=100 ms duty cycle=50% t off t on load resistance r l (k w ) switching time ( m s) figure 9. typical switching characteristics versus base resistance (saturated operation) 100 50 10 5 1.0 input: i f =10ma pulse width=100 ms duty cycle=50% base-emitter resistance, r be ( w ) t off t on switching time ( m s) 10k 50k 100k 500k 1m
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